Lincoln Electric 355M Manuel d'utilisateur télécharger pdf (Page 45)

THEORY OF OPERATION

E-7 E-7

POWER WAVE 355M/405M

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INSULATED GATE BIPOLAR

TRANSISTOR (IGBT)

OPERATION

An IGBT is a type of transistor. IGBT are semiconduc-

tors well suited for high frequency switching and high

current applications.

Example A in Figure E.6 shows an IGBT in passive

mode. There is no gate signal, zero volts relative to the

source, and therefore, no current flow. The drain ter-

minal of the IGBT may be connected to a voltage sup-

ply; but since there is no conduction, the circuit will not

supply current to components connected to the

source. The circuit is turned OFF like a light switch.

Example B shows the IGBT in an active mode. When

the gate signal , a positive DC voltage relative to the

source, is applied to the gate terminal of the IGBT, it is

capable of conducting current. A voltage supply con-

nected to the drain terminal will allow the IGBT to con-

duct and supply current to the circuit components

coupled to the source. Current will flow through the

conducting IGBT to downstream components as long

as the positive gate signal is present. This is similar to

turning ON a light switch.

FIGURE E.6 – IGBT

DRAIN

SOURCE

GATE

INJECTING LAYER

BUFFER LAYER

DRAIN DRIFT REGION

BODY REGION

p +

n +

n -

n + n +

DRAIN

SOURCE

GATE

INJECTING LAYER

BUFFER LAYER

DRAIN DRIFT REGION

BODY REGION

p +

n +

n + n +

POSITIVE

VOLTAGE

APPLIED

B. ACTIVE

A. PASSIVE

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Lincoln Electric 355M Manuel d'utilisateur Page 45

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